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Tuesday, July 7, 2020 | History

3 edition of Determination of impurities in silicon carbide by CTP AES (inductively coupled plasma atmomic emission spectrometry) after coprecipitation with Lanthanum hydroxide found in the catalog.

Determination of impurities in silicon carbide by CTP AES (inductively coupled plasma atmomic emission spectrometry) after coprecipitation with Lanthanum hydroxide

Determination of impurities in silicon carbide by CTP AES (inductively coupled plasma atmomic emission spectrometry) after coprecipitation with Lanthanum hydroxide

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Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in Washington, DC, [Springfield, Va .
Written in English

    Subjects:
  • Silicon carbide.,
  • Atomic emission spectroscopy.,
  • Decomposition (Chemistry)

  • Edition Notes

    StatementY. Harada, N. Kurata, G. Furuno.
    SeriesNASA technical translation -- NASA TT-20332., NASA technical translation -- 20332.
    ContributionsKurata, N., Furuno, G., United States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL15399521M

    This book explores the history and latest developments in the SiC field, with an emphasis on the properties and applications of SiC to electronics and optoelectronics. Silicon carbide (SiC) is an excellent semiconductor for electronic and optoelectronic applications for high-temperature, high-power, high-frequency, and radiation hard environments. A surface portion of a p type base region is made amorphous as an amorphous layer by implanting nitrogen ions which serve as impurities and ions which do not serve as impurities. After that, the amorphous layer is crystallized to have a specific crystal structure through solid-phase growth while disposing the impurities at lattice positions of the crystal structure.

      1. Introduction. Silicon is an important element and its determination is of analytical interest for different sample have been several reports concerning the determination of silicon in biological media by electrothermal atomic absorption spectrometry (ETAAS) and inductively coupled plasma atomic emission spectrometry (ICP-AES) 2, 3, 4. The impurities in technical silicon carbide primarily consist of free C and SiO 2 in varying amounts depending on the type of product. In addition, some Si and Fe and small quantities of Al and Ca occur. Mol weight: Pure SiC is composed of % C and % Si.

    Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th century silicon carbide has been an important material for sandpapers, grinding wheels, and cutting tools. More recently, it has found application. When silicon is dissolved in HF/HNO 3, a significant amount of silicon remains in solution, even after orus determination at mass 31 is normally performed by operating the ORS in helium collision mode. However, any silicon present in solution creates 30 SiH in the plasma, which interferes with 31 P; 14 N 16 OH also overlaps at mass Another approach for the determination of.


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Determination of impurities in silicon carbide by CTP AES (inductively coupled plasma atmomic emission spectrometry) after coprecipitation with Lanthanum hydroxide Download PDF EPUB FB2

The analysis of SiC powders used for the production of high-performance ceramics was investigated by combined procedures as well as by a direct technique including atomic spectrometric detection. For the combined chemical procedure, SiC powders ( g) were completely dissolved in a mixture of HNO3, HF and fuming H2SO4 in an autoclave at °C within 8 to 20 h.

In the final % Cited by:   T1 - ICP-AES detection of silicon carbide impurities volatilized in a graphite furnace with the use of carbon tetrachloride vapour.

AU - Záray, Gyula. AU - Kántor, Tibor. AU - Wolff, Gerhard. AU - Zadgorska, Zdravka. AU - Nickel, Hubertus. PY - /5/1. Y1 - /5/1Cited by: Determination of impurities in silicon carbide by CTP AES (inductively coupled plasma atmomic emission spectrometry) after coprecipitation with Lanthanum hydroxide Author: Y Harada ; N Kurata ; G Furuno ; United States.

Igniting 10 mg SiC at °C for 60 s in chlorinating atmosphere, the evaporated fraction of most of the constituents was higher than 90% (for Al about 50%). The line intensity vs sample mass (4–26 mg) relationships were linear for all impurities studied, while the intensity of silicon line showed a relatively small change with the sample by: Major doping impurities in SiC Other types of impurity centers in SiC Intrinsic defects in silicon carbide Radiation doping of SiC 2.

Influence of impurities on the growth of epitaxial SiC layers Heteropolytype SiC epitaxy Site-competition epitaxy of SiC 3. Deep centers and recombination processes in SiC. A simple, rapid and liable method was developed for the determination of trace impurities in high purity silicon carbide.

The stable and homogeneous slurry should be prepared by addition of wt% PEI as dispersant. The statistical limits of detection for some metal impurities in silicon nitride are below 5 µg/g; the relative standard deviation of the determination of silicon in silicon carbide and silicon.

Using homogeneous liquid–liquid extraction as a pre-concentration method, a determination procedure of trace impurities (Fe, Ni and Cu) by total reflection X-ray fluorescence (TXRF) analysis was developed and optimized for graphite and silicon carbide samples.

The samples were decomposed by alkali fusion. In order to solve the current lack of detection method of impurity elements in the vanadium-aluminum alloy, this paper established by inductively coupled plasma atomic emission spectrometry (ICP-AES) direct simultaneous determination of 15 kind of micro or trace impurity elements, including boron, tungsten, silicon, iron, lead, tin, arsenic, nickel, chromium, cobalt, copper.

chemical analysis of silicon carbide and raw materials containing silicon carbide. Part 1 deals with sampling, part 2 with the chemical analysis of carbon, silicon and loss of ignition and part 3 covers metal analysis and determination of oxygen and nitrogen concentrations.

Eltra combustion analyzers are well suited for the quality control of. Slurry sampling in combination with fluorination assisted electrothermal vaporization inductively coupled plasma atomic emission spectrometry (ETV-ICP-AES) was employed for the direct determination of trace impurities in silicon carbide ceramic powders.

The vaporization behaviors of silicon. A direct “tandem” atomic spectroscopic method for the determination of Ca, Fe and Ti impurities in SiC powders with various grain size (ICP-AES detection of the evolved sample components.

Direct determination of impurities in high purity silicon carbide by inductively coupled plasma optical emission spectrometry using slurry nebulization technique.

Analytica Chimica Acta(2), DOI: / R. Bertram. ICP-MS has been employed for the analysis of silicon carbide powders in connection with high pressure acid decomposition without and with matrix removal by evaporation. The powder is decomposed by treatment of a mg sample with a mixture of HNO 3, H 2 SO 4 and HF.

Prior to the analyses with ICP-MS the solutions have to be diluted to a matrix. Impurities in silicon carbide ceramics and their role during high temperature creep M.

Backhaus-Ricoult, N. Mozdzierz and P. Eveno Laboratoire de Physique des Mat6riaux, CNRS, Meudon, France (Received ii May J rei~ised 5 July J, accepted14 September J) Rksumk. La microstructure de deux cdramiques, SiC sans ajouts et SiC avec bore. ISOParts 1 to 3, are applicable to the analysis of all refractory products as classified in ISO [10] to [13] (shaped) and ISO [3] (unshaped) and raw materials containing carbon and/or silicon carbide.

Therefore, ISOParts 1 to 3, covers the full range of analysis from pure silicon carbide to oxidic refractory composition with low-content silicon carbide and/or nitrides. An additional application of the system is the determination of impurities in ceramic materials like silicon carbide.

Investigation indicated that PdCl 2 is a useful modifier for destruction of silicon carbide and simultaneous vaporization of the refractory impurities like aluminium, iron, vanadium and titanium.

SiC samples from different manufacturers have been analysed. Boron carbide (B 4 C) and silicon carbide (SiC) are currently employed in a wide range of high-performance applications due to their attractive physical and mechanical properties (Ref 1, 2.

Annotation Current SiC research is being driven by the growing promise of applications in blue light diodes, integrated circuits operating at high temperatures, high power/high frequency devices, and quantum structures.

This reference draws together research findings from around the world, in the form of 36 specialized "Datareviews," which comprise numeric data, text, figures, and key. Two digestion-free methods for trace analysis of boron nitride based on graphite furnace atomic absorption spectrometry (GFAAS) and electrothermal vaporization inductively coupled plasma spectrometry optical emission (ETV-ICP-OES) using direct solid sampling have been developed and applied to the determination of Al, Ca, Cr, Cu, Fe, Mg, Mn, Si, Ti and Zr in four boron nitride.

Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications.

Specifically included are: The book is also useful for design engineers, application engineers, and product managers in areas such. 1. Identification and Kinetic Properties of the Photosensitive Impurities and Defects in High-Purity Semi-Insulating Silicon Carbide.

By D. V. Savchenko, B. D. Shanina and E. N. Kalabukhova. Open access peer-reviewed. 2. One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide.Slurry sampling in combination with ETV-ICP-AES was employed for the direct determination of trace amounts of impurities in silicon dioxide and silicon nitride.

The ETV device consisted of a.